IRFR9310TR Vishay, IRFR9310TR Datasheet - Page 7

• Manufacturer Part Number: IRFR9310TR
• Description: MOSFET P-CH 400V 1.8A DPAK
• Manufacturer: Vishay

Specifications of IRFR9310TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Drain-source Breakdown Voltage: - 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91284
S-82992-Rev. B, 12-Jan-09
Fig. 12a - Unclamped Inductive Test Circuit
- 10 V
Fig. 13a - Basic Gate Charge Waveform
R
V
- 20 V
G
G
V
DS
Q
t
p
GS
I
AS
D.U.T.
0.01 Ω
L
Charge
Q
Q
GD
G
Driver
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
300
250
200
150
100
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
50
0
25
15 V
+
-
Starting T , Junction Temperature ( C)
V
A
DD
50
J
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
125
I
AS
12 V
Fig. 13b - Gate Charge Test Circuit
V
-0.49A
GS
Same type as D.U.T.
-0.7A
-1.1A
°
I D
Current regulator
0.2 µF
150
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
Vishay Siliconix
D.U.T.
V
I
D
DS
+
-
V
www.vishay.com
DS
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