BSH201,215 NXP Semiconductors, BSH201,215 Datasheet - Page 6

• Manufacturer Part Number: BSH201,215
• Description: MOSFET P-CH 60V 300MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BSH201,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 417mW
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 3nC @ 10V
• Vgs(th) (max) @ Id: 1.9V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 160mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054717215::BSH201 T/R::BSH201 T/R

Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
P-channel enhancement mode
MOS transistor
discharge during transport or handling.
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
Fig.15. SOT23 surface mounting package.
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
6
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
X
v
ISSUE DATE
M
97-02-28
A
SOT23
Product specification
BSH201
Rev 1.000