BSS87,115 NXP Semiconductors, BSS87,115 Datasheet - Page 3

• Manufacturer Part Number: BSS87,115
• Description: MOSFET N-CH 200V 400MA SOT-89
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSS87,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 400mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 400mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933943940115::BSS87 T/R::BSS87 T/R

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
CHARACTERISTICS
T
2001 May 18
R
V
I
I
V
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
SYMBOL
SYMBOL
j
DSS
GSS
on
off
(BR)DSS
GSth
Y
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
fs
10
10 mm
thermal resistance from junction to ambient
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
PARAMETER
PARAMETER
I
V
V
V
I
I
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
I
V
I
V
D
D
D
D
D
D
DS
DS
GS
DS
DS
DS
GS
GS
= 250 A; V
= 1 mA; V
= 400 mA; V
= 400 mA; V
= 250 mA; V
= 250 mA; V
= 60 V; V
= 200 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 20 V; V
= 0 to 10 V
= 0 to 10 V
3
note 1
CONDITIONS
CONDITIONS
GS
GS
GS
GS
GS
GS
GS
DS
DD
DD
GS
DS
= V
= 0
= 0;
= 0;
= 0;
= 0
= 25 V
= 0
= 0
= 10 V
= 50 V;
= 50 V;
DS
200
0.8
140
MIN.
VALUE
125
0.1
1.6
750
100
20
10
6
49
TYP.
Product specification
200
60
2.8
3
120
30
15
10
60
MAX.
100
BSS87
UNIT
K/W
V
nA
nA
V
mS
pF
pF
pF
ns
ns
UNIT
A