BSS87,115 NXP Semiconductors, BSS87,115 Datasheet - Page 5

• Manufacturer Part Number: BSS87,115
• Description: MOSFET N-CH 200V 400MA SOT-89
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSS87,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 400mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 400mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933943940115::BSS87 T/R::BSS87 T/R

Philips Semiconductors
PACKAGE OUTLINE
2001 May 18
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
N-channel enhancement mode
vertical D-MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT89
1.6
1.4
A
0.48
0.35
b 1
0.53
0.40
b 2
w
IEC
M
1.8
1.4
b 3
0.44
0.37
1
c
b 1
e
1
TO-243
JEDEC
4.6
4.4
D
0
b 3
D
e
REFERENCES
2
2.6
2.4
E
b 2
3.0
e
SC-62
scale
EIAJ
5
2
3
1.5
e 1
B
A
E
L
4.25
3.75
H E
min.
0.8
4 mm
L
0.13
w
PROJECTION
EUROPEAN
c
H E
Product specification
ISSUE DATE
97-02-28
99-09-13
BSS87
SOT89