PSMN038-100K,518 NXP Semiconductors, PSMN038-100K,518 Datasheet

MOSFET N-CH 100V 6.3A SOT96-1

PSMN038-100K,518

Manufacturer Part Number
PSMN038-100K,518
Description
MOSFET N-CH 100V 6.3A SOT96-1
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN038-100K,518

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38 mOhm @ 5.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.3A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1740pF @ 25V
Power - Max
3.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.038 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.3 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056595518
PSMN038-100K /T3
PSMN038-100K /T3
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
2.
Pin
1,2,3
4
5,6,7,8
SiliconMAX is a trademark of Royal Philips Electronics.
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
c
c
SiliconMAX™
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN038-100K in SOT96-1 (SO8).
PSMN038-100K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001
Very low on-state resistance
Fast switching
TrenchMOS™ technology.
DC to DC convertor
Computer motherboards
Switch mode power supplies.
1
products use the latest Philips TrenchMOS™
Simplified outline
SOT96-1 (SO8)
1
8
Top view
MBK187
5
4
Symbol
MBB076
Product specification
2
g
technology to achieve
d
s

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PSMN038-100K,518 Summary of contents

Page 1

... PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 1. Description SiliconMAX™ the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switching TrenchMOS™ technology. 3. Applications convertor Computer motherboards Switch mode power supplies ...

Page 2

... N-channel enhancement mode field-effect transistor Conditions 150 Figure 2 and Figure 5 Conditions 150 pulsed pulsed Rev. 01 — 16 January 2001 PSMN038-100K Typ Max Unit 100 V 6.3 A 3.5 W 150 Min Max Unit 100 6 3 +150 C 55 +150 C 3 © Philips Electronics N.V. 2001. All rights reserved ...

Page 3

... Product specification N-channel enhancement mode field-effect transistor 03aa17 I der (%) 125 150 175 der Fig 2. Normalized continuous drain current as a function of solder point temperature D. Rev. 01 — 16 January 2001 PSMN038-100K 03aa25 120 100 100 125 150 ------------------ - 100 03ad97 µs 100 µ ...

Page 4

... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 07897 Product specification N-channel enhancement mode field-effect transistor Conditions mounted on a metal clad substrate Rev. 01 — 16 January 2001 PSMN038-100K Value Unit Figure 4 20 03ad96 ( © ...

Page 5

... 150 5.2 A; Figure 7 and 150 6.3 A; Figure 6 Figure MHz; Figure 2 Figure 6 /dt = 100 Rev. 01 — 16 January 2001 PSMN038-100K Min Typ Max Unit 100 130 1 0.5 mA 100 6 21.5 nC 1740 pF 220 pF 135 0.7 1 0.3 C © Philips Electronics N.V. 2001. All rights reserved ...

Page 6

... V 0 º DSon a = --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 16 January 2001 PSMN038-100K 03ae00 V > DSon 25 º 150 º ( DSon 03aa29 - 100 140 180 ( © Philips Electronics N.V. 2001. All rights reserved. ...

Page 7

... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ae01 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 16 January 2001 PSMN038-100K 03aa35 min typ max ( 03ae03 iss ...

Page 8

... Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 07897 Product specification N-channel enhancement mode field-effect transistor 03ae02 ºC j 0.8 1 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 16 January 2001 PSMN038-100K 03ae04 6 ( º ...

Page 9

... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.050 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012 Rev. 01 — 16 January 2001 PSMN038-100K detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 ...

Page 10

... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010116 - Product specification; initial version 9397 750 07897 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 PSMN038-100K © Philips Electronics N.V. 2001. All rights reserved ...

Page 11

... Rev. 01 — 16 January 2001 PSMN038-100K Philips Semiconductors assumes no © Philips Electronics N.V. 2001 All rights reserved. ...

Page 12

... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA71) Rev. 01 — 16 January 2001 PSMN038-100K © Philips Electronics N.V. 2001. All rights reserved ...

Page 13

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 January 2001 Document order number: 9397 750 07897 N-channel enhancement mode field-effect transistor Printed in The Netherlands PSMN038-100K ...

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