PSMN038-100K,518 NXP Semiconductors, PSMN038-100K,518 Datasheet - Page 6

• Manufacturer Part Number: PSMN038-100K,518
• Description: MOSFET N-CH 100V 6.3A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN038-100K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056595518; PSMN038-100K /T3; PSMN038-100K /T3

Philips Semiconductors
9397 750 07897
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
R
0.09
0.08
0.07
0.06
0.05
0.04
0.03
( )
0.1
50
40
30
20
10
DSon
(A)
I
0
D
0
0
4.5 V
10
1
V
5 V
GS
= 10 V
2
20
7 V
3
30
T
4
j
40
V
= 25 ºC
03ad99
GS
03ad98
V
4.5 V
DS
I
D
= 6 V
10 V
6 V
5 V
(V)
(A)
7 V
5
50
Rev. 01 — 16 January 2001
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
= 25 C and 150 C; V
=
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
a
DSon 25 C
50
40
30
20
10
(A)
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
R
0
I
D
3
2
1
0
DSon
0
-60
V
DS
> I
-20
D
X R
2
DSon
T
PSMN038-100K
j
= 150 ºC
20
DS
4
60
I
D
© Philips Electronics N.V. 2001. All rights reserved.
R
25 ºC
100
DSon
6
V
140
T
GS
03ae00
j
( o C)
(V)
03aa29
180
8
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