BUK7213-40A,118 NXP Semiconductors, BUK7213-40A,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7213-40A,118
• Description: MOSFET N-CH TRENCH 40V TO252
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7213-40A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2245pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058199118

Philips Semiconductors
9397 750 12486
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
(m )
T
I D
(A)
j
j
300
200
100
= 25 C; t
= 25 C
26
20
14
0
8
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
6
p
16
= 300 s
2
18
7
100
20
8
4
9
14
10
6
12
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
200
label is V GS (V)
label is V GS (V)
I D (A)
8
V DS (V)
03nk27
03nk28
20
300
Rev. 01 — 29 January 2004
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain source on-state resistance
R DSon
(m
T
a
j
a
1.5
0.5
= 25 C; I
18
16
14
12
10
=
8
2
1
0
of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
5
DSon 25 C
R
DSon
D
= 25 A
0
TrenchMOS™ standard level FET
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BUK7213-40A
60
15
120
V GS (V)
T j ( C)
03aa27
03nk26
180
20
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