BUK7213-40A,118 NXP Semiconductors, BUK7213-40A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7213-40A,118
• Description: MOSFET N-CH TRENCH 40V TO252
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7213-40A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2245pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058199118

Philips Semiconductors
9397 750 12486
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V GS(th)
I
T
(V)
D
g fs
(S)
j
= 1 mA; V
= 25 C; V
30
25
20
15
10
5
4
3
2
1
0
junction temperature.
drain current; typical values.
-60
0
DS
DS
= V
= 25 V
0
GS
20
60
max
typ
min
40
120
I D (A)
T j ( C)
03aa32
03nk24
180
Rev. 01 — 29 January 2004
60
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
C
(A)
T
(pF)
V
I D
4000
3000
2000
1000
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
GS
= 25 C; V
0
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
10 -1
0
DS
= V
TrenchMOS™ standard level FET
GS
2
1
min
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BUK7213-40A
C oss
C rss
C iss
typ
10
4
max
V GS (V)
V DS (V)
03aa35
03nk29
10 2
6
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