STT5PF20V STMicroelectronics, STT5PF20V Datasheet

MOSFET P-CH 20V 5A SOT23-6

STT5PF20V

Manufacturer Part Number
STT5PF20V
Description
MOSFET P-CH 20V 5A SOT23-6
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STT5PF20V

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 2.5V
Input Capacitance (ciss) @ Vds
412pF @ 15V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity
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STT5PF20V
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Quantity:
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Manufacturer:
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Part Number:
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Quantity:
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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance.
APPLICATIONS
ORDERING INFORMATION
October 2003
STT5PF20V
TYPICAL R
TYPICAL R
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
MOBILE PHONE APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
TYPE
SALES TYPE
STT5PF20V
DS
DS
V
20 V
(on) = 0.065
(on) = 0.085
DSS
< 0.080
< 0.10
R
2.5V-DRIVE STripFET™ II POWER MOSFET
DS(on)
(@4.5V)
(@2.5V)
MARKING
(@2.5V)
(@4.5V)
STPN
P-CHANNEL 20V - 0.065 - 5A SOT23-6L
5 A
I
D
™”
PACKAGE
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
SOT23-6L
STT5PF20V
TAPE & REEL
PACKAGING
1/8

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STT5PF20V Summary of contents

Page 1

... MOBILE PHONE APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ORDERING INFORMATION SALES TYPE STT5PF20V October 2003 P-CHANNEL 20V - 0.065 - 5A SOT23-6L I DS(on) D (@4.5V (@2.5V) (@4.5V) (@2.5V) ™” MARKING PACKAGE STPN SOT23-6L STT5PF20V SOT23-6L INTERNAL SCHEMATIC DIAGRAM PACKAGING TAPE & REEL 1/8 ...

Page 2

... STT5PF20V ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT ( ) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed ...

Page 3

... 2.5V GS (see test circuit, Figure 2) Test Conditions (see test circuit, Figure 1) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 3) STT5PF20V Min. Typ. Max. Unit 4.5 nC 0.73 nC 1.75 nC Min. Typ. Max. Unit Min. Typ. Max. Unit 1 12.8 nC 0.8 ...

Page 4

... STT5PF20V Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedence Junction-PCB Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STT5PF20V 5/8 ...

Page 6

... STT5PF20V Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit ...

Page 7

... E1 1.50 L 0.35 e 0. MAX. MIN. 1.45 0.035 0.15 0.000 1.30 0.035 0.50 0.010 0.20 0.004 3.10 0.110 3.00 0.102 1.75 0.059 0.55 0.014 STT5PF20V mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022 0.037 0.075 7/8 ...

Page 8

... STT5PF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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