STT5PF20V STMicroelectronics, STT5PF20V Datasheet - Page 3

• Manufacturer Part Number: STT5PF20V
• Description: MOSFET P-CH 20V 5A SOT23-6
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STT5PF20V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 412pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
V
t
t
I
I
SD
d(on)
Q
Q
d(off)
SDM
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
g
rr
(1)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 1)
V
V
(see test circuit, Figure 2)
V
R
(see test circuit, Figure 1)
I
I
V
(see test circuit, Figure 3)
SD
SD
DD
DD
GS
DD
DD
G
G
= 4.7
= 4.7
= 5 A, V
= 5 A, di/dt = 100A/µs,
= 10 V, I
= 10 V, I
= 2.5V
= 10 V, I
= 16 V, T
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
D
D
D
GS
j
= 2.5 A
= 5 A,
= 150°C
= 2.5 A,
= 0
= 2.5 V
= 2.5 V
Min.
Min.
Min.
Typ.
Typ.
0.73
1.75
Typ.
12.8
4.5
0.8
47
32
11
38
20
Max.
Max.
Max.
1.2
STT5PF20V
20
5
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/8