STD70N2LH5 STMicroelectronics, STD70N2LH5 Datasheet

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STD70N2LH5

Manufacturer Part Number
STD70N2LH5
Description
MOSFET N-CH 25V 48A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD70N2LH5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.1 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohm @ 10 V
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 22 V
Continuous Drain Current
48 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10094-2
STD70N2LH5

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Quantity
Price
Part Number:
STD70N2LH5
Manufacturer:
ST
0
Features
Application
Description
This product utilizes the 5
rules of ST’s proprietary STripFET™ technology.
The lowest available R
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
September 2008
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STD70N2LH5
STU70N2LH5
R
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Switching applications
DS(on)
Type
STD70N2LH5
STU70N2LH5
Order codes
* Q
Device summary
g
industry benchmark
V
25 V
25 V
DSS
DS(on)
th
generation of design
R
*Q
DS(on)
0.0071 Ω
0.0075 Ω
g
, in the standard
DS(on)
N-channel 25 V, 0.006 Ω , 48 A - DPAK - IPAK
70N2LH5
70N2LH5
Marking
max
48 A
48 A
I
D
Rev 2
Figure 1.
STripFET™ V Power MOSFET
Package
DPAK
IPAK
DPAK
Internal schematic diagram
1
3
STD70N2LH5
STU70N2LH5
Tape & reel
Packaging
IPAK
Tube
Preliminary Data
www.st.com
1
2
3
1/12
12

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STD70N2LH5 Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. N-channel 25 V, 0.006 Ω DPAK - IPAK STripFET™ V Power MOSFET max DS(on) Figure the standard g Marking 70N2LH5 70N2LH5 Rev 2 STD70N2LH5 STU70N2LH5 Preliminary Data 3 1 DPAK IPAK Internal schematic diagram Package Packaging DPAK Tape & reel IPAK Tube 1/12 www ...

Page 2

... Thermal resistance Symbol Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-case max T Maximum lead temperature for soldering purpose j 2/12 Parameter = ° 100 ° ° Parameter STD70N2LH5 - STU70N2LH5 Value Unit 25 V ± 192 0.4 W/°C TBD mJ -55 to 175 °C Value Unit 2.5 ° ...

Page 3

... STD70N2LH5 - STU70N2LH5 2 Electrical characteristics (T = 25°C unless otherwise specified) CASE Table 4. Static Symbol Drain-source breakdown V (BR)DSS Voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 5. Dynamic Symbol Input capacitance ...

Page 4

... Test conditions V = =4.7 Ω (Figure 2 and Figure =4.7 Ω (Figure 2 and Figure 7) Parameter Test conditions ( di/dt =100 A/µ °C DD (Figure 4) STD70N2LH5 - STU70N2LH5 Min. Typ. Max TBD = TBD = TBD = TBD Min. Typ. Max. 48 192 =0 1.1 GS TBD TBD TBD Unit ns ns ...

Page 5

... STD70N2LH5 - STU70N2LH5 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load switching and diode recovery times Figure 6. Unclamped inductive waveform Figure 3. Gate charge test circuit Figure 5. Unclamped Inductive load test circuit Figure 7. Switching time waveform ...

Page 6

... Test circuit Figure 8. Gate charge waveform 6/12 STD70N2LH5 - STU70N2LH5 ...

Page 7

... STD70N2LH5 - STU70N2LH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 8

... STD70N2LH5 - STU70N2LH5 inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.019 0.023 0.236 0.244 0.200 ...

Page 9

... STD70N2LH5 - STU70N2LH5 DIM TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 0.85 0.3 0.95 0.45 0.6 0.48 0.6 6 6.2 6.4 6.6 4.4 4.6 15.9 16.3 9 9.4 0.8 1.2 0 Package mechanical data inch MIN ...

Page 10

... MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 STD70N2LH5 - STU70N2LH5 REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13 ...

Page 11

... STD70N2LH5 - STU70N2LH5 6 Revision history Table 8. Document revision history Date 16-Jan-2008 23-Sep-2008 Revision 1 First release 2 V value has been changed on GS Revision history Changes Table 2 Table 5 and 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STD70N2LH5 - STU70N2LH5 ...

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