STD70N2LH5 STMicroelectronics, STD70N2LH5 Datasheet - Page 5

• Manufacturer Part Number: STD70N2LH5
• Description: MOSFET N-CH 25V 48A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD70N2LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10094-2; STD70N2LH5

STD70N2LH5 - STU70N2LH5
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Figure 2.
Figure 4.
Figure 6.
Switching times test circuit for
resistive load
Test circuit for inductive load
switching and diode recovery times
Unclamped inductive waveform
Test circuit
Figure 3.
Figure 5.
Figure 7.
Gate charge test circuit
Unclamped Inductive load test
circuit
Switching time waveform
Test circuit
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