IRF7807ATRPBF International Rectifier, IRF7807ATRPBF Datasheet

IRF7807ATRPBF

Manufacturer Part Number

IRF7807ATRPBF

Description

MOSFET N-CH 30V 8.3A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7807ATRPBF.pdf (8 pages)

Specifications of IRF7807ATRPBF

Package / Case

8-SOIC (3.9mm Width)

Mounting Type

Surface Mount

Power - Max

2.5W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

17nC @ 5V

Vgs(th) (max) @ Id

1V @ 250µA

Current - Continuous Drain (id) @ 25° C

8.3A

Drain To Source Voltage (vdss)

30V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

25 mOhm @ 7A, 4.5V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7807ATRPBF

Manufacturer:

NXP

Quantity:

120 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7807ATRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 8
Download datasheet (204Kb)

• N Channel Application Specific MOSFETs

• Ideal for Mobile DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Lead-Free

Description

These new devices employ advanced HEXFET

Power MOSFET technology to achieve an

unprecedented balance of on-resistance and gate

charge. The reduced conduction and switching losses

make them ideal for high efficiency DC-DC

Converters that power the latest generation of mobile

microprocessors.

A pair of IRF7807 devices provides the best cost/

performance solution for system voltages, such as 3.3V

and 5V.

Absolute Maximum Ratings

Thermal Resistance

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V

Pulsed Drain Current

Power Dissipation

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed source Current

Parameter

Maximum Junction-to-Ambientƒ

www.irf.com

≥ 4.5V)

25°C

70°C

25°C

70°C

Symbol

HEXFET

, T

θJA

STG

Chip-Set for DC-DC Converters

IRF7807

2.5

8.3

6.6

SO-8

Vds

Rds(on)

Qsw

Qoss

–55 to 150

Device Features

Max.

±12

2.5

1.6

IRF7807APbF

IRF7807 IRF7807A

16.8nC

IRF7807PbF

5.2nC

25mΩ

17nC

IRF7807A

30V

2.5

8.3

6.6

16.8nC

25mΩ

17nC

T o p V ie w

30V

PD – 95290

Units

°C/W

09/22/04

°C

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