STQ3NK50ZR-AP STMicroelectronics, STQ3NK50ZR-AP Datasheet

MOSFET N-CH 500V 500MA TO-92

STQ3NK50ZR-AP

Manufacturer Part Number
STQ3NK50ZR-AP
Description
MOSFET N-CH 500V 500MA TO-92
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STQ3NK50ZR-AP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 Ohm @ 1.15A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
3W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
January 2005
Table 1: General Features
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme opyimization of ST’s well established strip
based PowerMESH™ layout. In addition to push-
ing on-resistance significatly down, special care is
taken to ensure a very good dv/dt capability for the
most demanding application. Such series comple-
ments ST full range of high voltage MOSFETs
icluding revolutionary MDmesh™ products
APPLICATIONS
Table 2: Order Coder
STQ3NK50ZR-AP
STD3NK50Z
STD3NK50Z-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY)
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
LIGHTING
STQ3NK50ZR-AP
STD3NK50Z-1
SALES TYPE
TYPE
STD3NK50Z
DS
(on) = 2.8
N-CHANNEL 500V - 2.8 - 2.3A TO-92/DPAK/IPAK
500 V
500 V
500 V
V
DSS
R
3.3
3.3
3.3
DS(on)
Q3NK50ZR
MARKING
D3NK50Z
D3NK50Z
Zener-Protected SuperMESH™ MOSFET
0.5 A
2.3 A
2.3 A
I
D
STD3NK50Z - STD3NK50Z-1
45 W
45 W
3 W
Pw
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-92 (Ammopak)
TO-92
DPAK
IPAK
STQ3NK50ZR-AP
IPAK
TAPE & REEL
PACKAGING
AMMOPAK
1
2
TUBE
Rev. 2
3
DPAK
1
3
1/14

Related parts for STQ3NK50ZR-AP

STQ3NK50ZR-AP Summary of contents

Page 1

... STD3NK50Z-1 January 2005 STD3NK50Z - STD3NK50Z-1 Zener-Protected SuperMESH™ MOSFET Figure 1: Package DS(on) D 3.3 0 3.3 2 3.3 2 TO-92 (Ammopak) Figure 2: Internal Schematic Diagram MARKING PACKAGE Q3NK50ZR D3NK50Z D3NK50Z STQ3NK50ZR- IPAK PACKAGING TO-92 AMMOPAK DPAK TAPE & REEL IPAK 3 1 DPAK 3 TUBE Rev. 2 1/14 ...

Page 2

... STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD (HBM-C=100 pF, R= 1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... Reverse Recovery Current RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq DSS STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP =25°C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions mA ...

Page 4

... STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 3: Safe Operating Area For TO-92 Figure 4: Safe Operating Area For DPAK / IPAK Figure 5: Output Characteristics 4/14 Figure 6: Thermal Impedance TO-92 Figure 7: Thermal Impedance For DPAK / IPAK Figure 8: Transfer Characteristics ...

Page 5

... Figure 9: Transconductance Figure 10: Gate Charge vs Gate-source Voltage Figure 11: Static Drain-Source On Resistance STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 12: Capacitance Variations Figure 13: Normalized Gate Threshold Voltage vs Temperature Figure 14: Source-Drain Forward Characteris- tics 5/14 ...

Page 6

... STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 15: Maximum Avalanche Energy vs Temperature Figure 16: Normalized On Resistance vs Tem- perature 6/14 Figure 17: Normalized BV DSS vs Temperature ...

Page 7

... Figure 18: Unclamped Inductive Load Test Cir- cuit Figure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 21: Unclamped Inductive Wafeform Figure 22: Gate Charge Test Circuit 7/14 ...

Page 8

... STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 8/14 TO-252 (DPAK) MECHANICAL DATA mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.8 1. inch MIN. TYP. MAX. 0.087 0.094 ...

Page 9

... B 0. 0. 6.4 G 4 0 STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.012 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 ...

Page 10

... STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP DIM. MIN. A 4.32 b 0.36 D 4.45 E 3.30 e 2.41 e1 1.14 L 12.70 R 2.16 S1 0.92 W 0.41 V 10/14 TO-92 MECHANICAL DATA mm. TYP MAX. MIN. 4.95 0.170 0.51 0.014 4.95 0.175 3.94 0.130 2.67 0.094 1.40 0.044 15.49 0.50 2.41 0.085 1.52 0.036 0.56 0.016 5° ...

Page 11

... P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 * on sales type STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP TUBE SHIPMENT (no suffix)* All dimensions are in millimeters REEL MECHANICAL DATA mm DIM. MIN. MAX. A 330 B 1.5 C 12.8 13.2 D 20.2 G 16.4 18 ...

Page 12

... STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP DIM. MIN. A1 4. 0.41 P0 12.5 P2 5.65 F1, F2 2.44 delta 17.5 W0 5 18 delta P -1 12/14 TO-92 AMMOPACK mm. TYP MAX. MIN. 4.95 0.170 3.94 0.130 1.6 2.3 0.56 0.016 12.7 12.9 0.49 6.35 7.05 0.22 2.54 2 ...

Page 13

... Table 10: Revision History Date Revision 09-Jul-2004 1 17-Jan-2005 2 STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Description of Changes First Release. Complete Version 13/14 ...

Page 14

... STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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