STQ3NK50ZR-AP STMicroelectronics, STQ3NK50ZR-AP Datasheet - Page 3

• Manufacturer Part Number: STQ3NK50ZR-AP
• Description: MOSFET N-CH 500V 500MA TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STQ3NK50ZR-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 3W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
I
I
C
SD
I
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
gs
gd
r
f
(1)
g
rr
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
R
(see Figure 19)
V
V
(see Figure 22)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
D
V
SD
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 2.3 A, V
=2.3 A, di/dt = 100 A/µs
=2.3A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 15 V
= 0V, V
= 250 V, I
= 400 V, I
= 10V
= 40V, T
= 40V, T
= 25V, f = 1 MHz, V
STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
DS
I
D
GS
D
GS
D
j
j
GS
= 25°C
= 150°C
= 1.15 A
D
D
= 50 µA
= 1.15 A
= 0V to 400 V
= 0
= 10 V
= 1.15 A
= 2.3 A,
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
500
3
oss
when V
Typ.
3.75
Typ.
27.5
Typ.
280
250
745
300
960
2.8
1.5
2.5
5.6
6.2
42
13
24
14
11
8
8
6
DS
increases from 0 to 80%
Max.
Max.
Max.
±10
4.5
2.3
9.2
1.6
3.3
50
15
1
Unit
Unit
Unit
µC
µC
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
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