STF2HNK60Z STMicroelectronics, STF2HNK60Z Datasheet - Page 2
STF2HNK60Z
Manufacturer Part Number
STF2HNK60Z
Description
MOSFET N-CH 600V 2A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STF2HNK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220FP
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
20000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
1A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
4.4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF2HNK60Z
Manufacturer:
ST
Quantity:
150 000
Company:
Part Number:
STF2HNK60Z
Manufacturer:
ST
Quantity:
5 000
Company:
Part Number:
STF2HNK60Z
Manufacturer:
ST
Quantity:
12 500
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
2/16
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
V
Rthj-case
Rthj-amb
Rthj-lead
Symbol
Symbol
dv/dt (1)
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
T
AR
ISO
T
DS
GS
stg
AS
GSO
D
D
1.4A, di/dt
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD (HBM-C= 100pF, R=1.5k )
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
Gate source
Breakdown Voltage
200A/µs, V
Parameter
j
= 25 °C, I
DD
V
(BR)DSS
Parameter
Parameter
D
C
GS
I
= I
gs
= 25°C
GS
j
, T
= ± 1 mA (Open Drain)
= 20 k )
max)
AR
j
Test Conditions
= 0)
, V
T
DD
JMAX.
C
C
= 25°C
= 100°C
= 50 V)
TO-220/IPAK
TO-220 /
IPAK
2.77
0.77
0.36
100
Min.
1.4
5.6
45
30
--
300
Max Value
-55 to 150
TO-220FP
Value
1500
TO-92
± 30
600
600
0.025
4.5
1.4
90
0.25
6.25
100
Typ.
0.4
1.6
--
3
TO-220FP
0.77 (*)
1.4 (*)
5.6 (*)
TO-92
2500
0.16
Max.
120
260
20
40
--
W/°C
°C/W
°C/W
°C/W
Unit
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
V
A
V