STD20NF20 STMicroelectronics, STD20NF20 Datasheet - Page 3

MOSFET N-CH 200V 18A DPAK

STD20NF20

Manufacturer Part Number
STD20NF20
Description
MOSFET N-CH 200V 18A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STD20NF20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
90000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
18A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.125Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5810-2

Available stocks

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Manufacturer
Quantity
Price
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STD20NF20, STF20NF20, STP20NF20
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 4.
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
SD
I
P
DM
V
E
V
V
T
I
AR
I
I
TOT
T
T
ISO
DS
GS
stg
≤ 18 A, di/dt ≤ 400 A/µs, V
AS
D
D
l
j
(1)
(2)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; Tc = 25 °C)
Storage temperature
Max. operating junction temperature
j
= 25 °C, I
DD
Parameter
Parameter
Parameter
Doc ID 13154 Rev 4
≤ V
D
C
(BR)DSS
= 25 °C
= I
GS
AR
= 0)
, V
DD
C
C
= 25 °C
= 100 °C
= 50 V)
j
max)
TO-220
TO-220, DPAK
1.38
62.5
0.72
110
Max value
-55 to 175
DPAK
50
1.38
Value
± 20
110
200
18
18
11
72
15
(1)
TO-220FP
Electrical ratings
TO-220FP
2500
0.2
30
62.5
300
5
W/°C
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
°C
W
A
V
V
A
A
A
V
3/15

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