IRL3103STRRPBF International Rectifier, IRL3103STRRPBF Datasheet - Page 2

• Manufacturer Part Number: IRL3103STRRPBF
• Description: MOSFET N-CH 30V 64A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3103STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 64A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source-Drain Ratings and Characteristics
IRL3103S/LPbF
Electrical Characteristics @ T

ƒ
‚
Notes:
R
L
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
E
I
I
I
V
t
Q
t
DSS
d(on)
r
d(off)
f
SM
GSS
S
rr
on
D
fs
S
2
DS(on)
(BR)DSS
GS(th)
AS
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
T
(BR)DSS
max. junction temperature. (See fig. 11)
R
SD
Starting T
J
G
≤ 175°C
≤ 34A, di/dt ≤ 120A/µs, V
= 25Ω, I
/∆T
J
J
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 220µH
AS
= 34A, V
GS

Parameter
Parameter
=10V (See Figure 12)
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1320…130†
Min. Typ. Max. Units
1.0
–––
Min. Typ. Max. Units
–––
„
…
†
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
30
22
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
This is a calculated value limited to T
operation outside rated limits.
0.028 –––
1650 –––
4.5
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
120
7.5
650
110
110
–––
–––
–––
8.9
9.1
14
57
–––
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
170
5.9
1.2
12
16
25
33
17
220
86
64
V/°C
mΩ
mJ
µA
nA
nC
nH
pF
nC
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
J
J
= 34A
= 34A
= 25°C, I
= 25°C, I
= 34A, L = 0.22mH
= 1.8Ω
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6 and 13
= 15V
= 4.5V, See Fig. 10 „
= 0V
GS
, I
D
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
J
Conditions
= 34A
= 34A, V
= 250µA
= 34A
= 34A„
= 175°C .
= 28A
„
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
„
„
J
= 150°C
= 0V
G
G
S
„
+L
D
S
D
)
S
D