IRL3103STRRPBF International Rectifier, IRL3103STRRPBF Datasheet - Page 5

• Manufacturer Part Number: IRL3103STRRPBF
• Description: MOSFET N-CH 30V 64A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3103STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 64A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
0.1
70
60
50
40
30
20
10
10
0.00001
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
100

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
175
0.001
V
90%
10%
V
Fig 10b. Switching Time Waveforms
DS
GS
Fig 10a. Switching Time Test Circuit

t
R
d(on)
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
1. Duty factor D =
2. Peak T = P
IRL3103S/LPbF
Notes:
V
V
GS
GS
t
r
V
J
DS
0.01
DM
x Z
t / t
1

thJC
D.U.T.
P
2
t
DM
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
DD
5
0.1