IRL3103STRRPBF International Rectifier, IRL3103STRRPBF Datasheet - Page 7

• Manufacturer Part Number: IRL3103STRRPBF
• Description: MOSFET N-CH 30V 64A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3103STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 64A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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V
GS
Re-Applied
Voltage
Reverse
Recovery
Current

*
Reverse Polarity of D.U.T for P-Channel
‚
+
-
R
Fig 14. For N-channel
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• I
• D.U.T. - Device Under Test
Diode Recovery
SD
Current
HEXFET
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
di/dt
Current Transformer
®
power MOSFETs
D =
-
G
Period
„
P.W.
IRL3103S/LPbF
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
7