IRL3103STRRPBF International Rectifier, IRL3103STRRPBF Datasheet - Page 3

• Manufacturer Part Number: IRL3103STRRPBF
• Description: MOSFET N-CH 30V 64A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3103STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 64A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
2.0

TOP
BOTTOM
V
3.0
V
DS
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.0
1
2.7V

T = 25 C
J
5.0


°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
6.0
10
= 15V

T = 175 C
J
°
7.0
°
100
8.0
1000
100
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0

TOP
BOTTOM

I =
D
V
56A
DS
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
IRL3103S/LPbF
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
2.7V

20µs PULSE WIDTH
T = 175 C
J
10

°
V
°
GS
=
10V
3
100