IRL3103STRRPBF International Rectifier, IRL3103STRRPBF Datasheet - Page 4

• Manufacturer Part Number: IRL3103STRRPBF
• Description: MOSFET N-CH 30V 64A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3103STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 64A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL3103S/LPbF
4
3000
2500
2000
1500
1000
1000
500
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage

T = 175 C
J
V
V
0.4
DS
SD

Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss

°
C iss
C oss
C rss


0.8
=
=
=
=

T = 25 C
0V,
C
C
C
J
gs
gd
ds
+ C
+ C
1.2
10
°
f = 1MHz
gd ,
gd
1.6
C
ds

SHORTED
V
GS
2.0
= 0 V
2.4
100
15
12
Fig 8. Maximum Safe Operating Area
9
6
3
0
0

Fig 6. Typical Gate Charge Vs.
I =
D
34A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
10
20

V
V

DS
DS
FOR TEST CIRCUIT
= 24V
= 15V
SEE FIGURE
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30
13
40