IRF6633TRPBF International Rectifier, IRF6633TRPBF Datasheet

MOSFET N-CH 20V 16A DIRECTFET

IRF6633TRPBF

Manufacturer Part Number
IRF6633TRPBF
Description
MOSFET N-CH 20V 16A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6633TR1PBF.pdf (10 pages)

Specifications of IRF6633TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.6 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1250pF @ 10V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MP
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.4 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Power Dissipation
89 W
Gate Charge Qg
11 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6633TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF6633TRPBF
Manufacturer:
SHINDENGEN
Quantity:
17
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF6633TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
l
l
l
l
l
l
l
l

‚
ƒ
Notes:
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
I
E
I
D
D
D
DM
AR
DS
GS
AS
RoHS Compliant 
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses and Switching Losses
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
A
A
C
= 25°C
= 70°C
= 25°C
20
15
10
5
0
Fig 1. Typical On-Resistance Vs. Gate Voltage
2.0
SX
V GS , Gate-to-Source Voltage (V)
4.0
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
6.0
Ãg
T J = 125°C
T J = 25°C
8.0
I D = 16A
g
Parameter
GS
GS
GS
MQ
10.0
@ 10V
@ 10V
@ 10V
h
f
MX
„
…
†
20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V
Q
11nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
DSS
measured with thermocouple mounted to top (Drain) of part.
MT
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
12
10
8
6
4
2
0

J
0
4.0nC
= 25°C, L = 0.51mH, R
Q
I D = 13A
gd
V
DirectFET™ Power MOSFET ‚
GS
4
MP
MP
Q G Total Gate Charge (nC)
1.2nC
Q
gs2
8
Max.
V DS = 16V
VDS= 10V
132
±20
20
16
13
59
41
13
IRF6633TRPbF
R
12
DS(on)
G
32nC
Q
= 25Ω, I
IRF6633PbF
rr
16
DirectFET™ ISOMETRIC
TM
packaging to achieve
AS
8.8nC
Q
= 13A.
20
oss
R
DS(on)
Units
24
V
mJ
1.8V
V
A
A
gs(th)
1
5/3/06

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IRF6633TRPBF Summary of contents

Page 1

... Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.51mH IRF6633PbF IRF6633TRPbF DirectFET™ Power MOSFET ‚ DS(on) DS(on gs2 rr oss 1 ...

Page 2

IRF6633PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

IRF6633PbF 1000 100 10 1 2.5V ≤60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 150° 25° -40°C ...

Page 5

150°C 100 25° -40°C 10.0 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6633PbF 0 1K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, MP Outline (Medium Size Can, P-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 8

IRF6633PbF DirectFET™ Outline Dimension, MP Outline (Medium Size Can, P-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6633TRPBF). For 1000 parts on 7" reel, order IRF6633TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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