IRLU3110ZPBF International Rectifier, IRLU3110ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRLU3110ZPBF
• Description: MOSFET N-CH 100V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3110ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3980pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 63A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 16 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 63 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
0.01
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
0
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
4
1
2.5V
6
Tj = 25°C
10
V DS = 25V
8
60µs PULSE WIDTH
60µs PULSE WIDTH
10
T J = 175°C
TOP
BOTTOM
100
12
14
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1000
16
1000
100
150
125
100
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
75
50
25
1
0
0.1
0
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
1
25
2.5V
10
Tj = 175°C
V DS = 10V
300µs PULSE WIDTH
T J = 25°C
60µs PULSE WIDTH
T J = 175°C
50
TOP
BOTTOM
100
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1000
3
75