IRLU3110ZPBF International Rectifier, IRLU3110ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRLU3110ZPBF
• Description: MOSFET N-CH 100V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3110ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3980pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 63A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 16 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 63 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
4
1000
1000
100
100
0.1
10
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 175°C
C iss
C rss
C oss
f = 1 MHZ
10
T J = 25°C
V GS = 0V
100
1000
100
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
I D = 38A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
10
1
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
V DS = 80V
V DS = 50V
1msec
20
10
100µsec
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100
30
1000
40