IRLU3110ZPBF International Rectifier, IRLU3110ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRLU3110ZPBF
• Description: MOSFET N-CH 100V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3110ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3980pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 63A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 16 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 63 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
70
60
50
40
30
20
10
0.1
0
10
1
1E-006
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.01
0.10
0.05
Case Temperature
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
J
1
Ci= i Ri
1
Ci
3.0
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
R
-60 -40 -20 0 20 40 60 80 100120140160180
1
R
0.001
1
I D = 63A
V GS = 10V
2
R
2
2
R
T J , Junction Temperature (°C)
2
vs. Temperature
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
0.383
0.667
0.01
0.000267
0.003916
i (sec)
5
0.1