IRLU3110ZPBF International Rectifier, IRLU3110ZPBF Datasheet - Page 8

• Manufacturer Part Number: IRLU3110ZPBF
• Description: MOSFET N-CH 100V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3110ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3980pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 63A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 16 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 63 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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D.U.T
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Fig 17.
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SD
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
„
G
HEXFET
t
d(on)
+
t
r
®
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Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
Ripple
for N-Channel
Body Diode
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Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V