IRLU3110ZPBF International Rectifier, IRLU3110ZPBF Datasheet - Page 6

• Manufacturer Part Number: IRLU3110ZPBF
• Description: MOSFET N-CH 100V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3110ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3980pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 63A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 16 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 63 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage vs. Temperature
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
0
-75 -50 -25 0
25
Fig 12c. Maximum Avalanche Energy
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
50
T J , Temperature ( °C )
vs. Drain Current
75
25 50 75 100 125 150 175 200
100
TOP
BOTTOM 38A
125
www.irf.com
150
I D
4.4A
6.5A
175