MOSFET N-CH 60V 30A TO-220

STP36NF06L

Manufacturer Part NumberSTP36NF06L
DescriptionMOSFET N-CH 60V 30A TO-220
ManufacturerSTMicroelectronics
SeriesSTripFET™
STP36NF06L datasheets
 

Specifications of STP36NF06L

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs40 mOhm @ 15A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id2.5V @ 250µA
Gate Charge (qg) @ Vgs17nC @ 5VInput Capacitance (ciss) @ Vds660pF @ 25V
Power - Max70WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.04 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)15 SDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 18 VContinuous Drain Current30 A
Power Dissipation70000 mWMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Continuous Drain Current Id30ADrain Source Voltage Vds60V
On Resistance Rds(on)40mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ2.5VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-7522-5
STP36NF06L
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STP36NF06L - STB36NF06L
Table 5.
Switching on/off (inductive load)
Symbol
t
Turn-on delay Time
d(on)
t
Rise time
r
t
Turn-off delay time
d(off)
t
Fall time
f
Table 6.
Source Drain Diode
Symbol
I
Source-drain current
SD
(1)
I
Source-drain current (pulsed)
SDM
(2)
V
Forward on voltage
SD
t
Reverse recovery time
rr
Q
Reverse recovery charge
rr
I
Reverse recovery current
RRM
1. Pulse width limited by safe operating area.
2. Pused: pulse duration=300µs, duty cycle 1.5%
Parameter
Test condictions
V
=30V, I
DD
R
=4.7Ω , V
G
(see
Figure
V
=30V, I
DD
R
=4.7Ω , V
G
(see
Figure
Parameter
Test condictions
I
=24A, V
SD
I
=20A, V
SD
di/dt=100A/µs, Tj=150°C
Electrical characteristics
Min.
Typ.
Max.
=15A
D
10
=5V
GS
80
14)
=15A
D
19
=5V
GS
13
14)
Min.
Typ.
Max.
30
120
=0
1.5
GS
55
=20V,
DD
107
3.9
Unit
ns
ns
ns
ns
Unit
A
A
V
ns
nC
A
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