STP55NF06L STMicroelectronics, STP55NF06L Datasheet - Page 10

• Manufacturer Part Number: STP55NF06L
• Description: MOSFET N-CH 60V 55A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP55NF06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 1.7V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 55 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6742-5; STP55NF06L

Package mechanical data
10/15
DIM.
A1
A2
B2
C2
D1
E1
V2
L2
L3
G
M
A
B
C
D
E
R
L
2.49
0.03
1.14
0.45
1.23
8.95
4.88
1.27
MIN.
4.4
0.7
1.4
2.4
10
15
0º
D
TO-247 MECHANICAL DATA
2
mm.
TYP
8.5
0.4
8
PAK MECHANICAL DATA
15.85
MAX.
2.69
0.23
0.93
1.36
9.35
10.4
5.28
1.75
4.6
1.7
0.6
1.4
3.2
STB55NF06L - STB55NF06L-1 - STP55NF06L
4º
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
MIN.
0.315
0.334
0.015
TYP.
inch
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
MAX.
1