STP55NF06L STMicroelectronics, STP55NF06L Datasheet - Page 5

• Manufacturer Part Number: STP55NF06L
• Description: MOSFET N-CH 60V 55A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP55NF06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 1.7V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 55 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6742-5; STP55NF06L

STB55NF06L - STB55NF06L-1 - STP55NF06L
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 12)
V
R
(see Figure 12)
I
I
di/dt = 100A/µs,
V
(see Figure 14)
SD
SD
DD
DD
G
G
DD
=4.7Ω, V
=4.7Ω, V
= 55A,
Test conditions
Test conditions
= 55A, V
=30 V, I
=30V, I
= 30V, Tj = 150°C
D
D
GS
=27.5A,
GS
GS
=27.5A,
= 4.5V
=4.5V
=0
Electrical characteristics
Min.
Min
Typ.
200
Typ.
100
80
20
40
20
5
Max
Max.
1.6
12
48
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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