STD10NM65N STMicroelectronics, STD10NM65N Datasheet - Page 14

• Manufacturer Part Number: STD10NM65N
• Description: MOSFET N-CH 650V 9A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD10NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7957-2; STD10NM65N

Package mechanical data
14/17
DIM.
A1
A2
D1
E1
V2
b4
c2
e1
L1
L2
L4
A
D
E
H
R
b
c
e
L
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
TO-252 (DPAK) mechanical data
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
0068772_G
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o