STD10NM65N STMicroelectronics, STD10NM65N Datasheet - Page 7

• Manufacturer Part Number: STD10NM65N
• Description: MOSFET N-CH 650V 9A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD10NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7957-2; STD10NM65N

STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate source voltage Figure 13. Capacitance variations
Output characteristics
Figure 9.
Figure 11. Static drain-source on resistance
Transfer characteristics
Electrical characteristics
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