STF10N62K3 STMicroelectronics, STF10N62K3 Datasheet

no-image

STF10N62K3

Manufacturer Part Number
STF10N62K3
Description
MOSFET N-CH 620V 8.4A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STF10N62K3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
8.4A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 50V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STF10N62K3
Manufacturer:
ST
Quantity:
500
Part Number:
STF10N62K3
Manufacturer:
STMicroelectronics
Quantity:
800
Part Number:
STF10N62K3
Manufacturer:
ST
Quantity:
120
Part Number:
STF10N62K3
Manufacturer:
ST
Quantity:
20 000
Part Number:
STF10N62K3
0
Company:
Part Number:
STF10N62K3
Quantity:
55 000
Company:
Part Number:
STF10N62K3
Quantity:
20
Part Number:
STF10N62K3,STF30NM50N,F10N62K3,F30NM50N,
Manufacturer:
ST
0
Part Number:
STF10N62K3��10N62K3
Manufacturer:
ST
0
Part Number:
STF10N62K3������
Manufacturer:
ST
0
Features
1. Limited by package
Application
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimized vertical structure. In
addition to pushing on-resistance significantly
down, special attention has been taken to ensure
a very good dynamic performance coupled with a
very large avalanche capability for the most
demanding application.
Table 1.
June 2009
STP10N62K3
STF10N62K3
STI10N62K3
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Switching applications
Type
STP10N62K3
STF10N62K3
Order codes
STI10N62K3
Device summary
N-channel 620 V, 0.68 Ω, 8.4 A, TO-220, TO-220FP, I
620 V
620 V
620 V
V
DSS
< 0.75 Ω
< 0.75 Ω
< 0.75 Ω
R
max
DS(on)
8.4 A
10N62K3
10N62K3
10N62K3
8.4 A
8.4 A
Marking
I
D
(1)
Doc ID 15640 Rev 2
125 W
125 W
30 W
P
w
STF10N62K3, STI10N62K3
SuperMESH3™ Power MOSFET
Figure 1.
TO-220
TO-220FP
Package
TO-220
I²PAK
G(1)
Internal schematic diagram
1
2
3
STP10N62K3
I²PAK
D(2)
S(3)
1 2
Packaging
3
Tube
Tube
Tube
TO-220FP
www.st.com
2
AM01476v1
PAK
1
1/15
2
3
15

Related parts for STF10N62K3

STF10N62K3 Summary of contents

Page 1

... Table 1. Device summary Order codes STF10N62K3 STI10N62K3 STP10N62K3 June 2009 STF10N62K3, STI10N62K3 SuperMESH3™ Power MOSFET (1) 8 8.4 A 125 W TO-220 8 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/15 STF10N62K3, STI10N62K3, STP10N62K3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Doc ID 15640 Rev ...

Page 3

... STF10N62K3, STI10N62K3, STP10N62K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain source voltage DS V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse I AR avalanche (pulse width limited by T ...

Page 4

... Parameter Test conditions MHz 496 496 f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain V = 496 Figure 18) (see DSS DSS Doc ID 15640 Rev 2 STF10N62K3, STI10N62K3, STP10N62K3 Min. Typ 620 =125 ° 100 µ 0.68 Min. Typ 1250 - 138 3 7.4 23 Max ...

Page 5

... STF10N62K3, STI10N62K3, STP10N62K3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... AM03909v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03910v1 10µs 100µs 1ms 10ms 100 V (V) DS Figure 7. AM03911v1 (A) =10V (V) DS Doc ID 15640 Rev 2 STF10N62K3, STI10N62K3, STP10N62K3 Thermal impedance for TO-220, I²PAK Thermal impedance for TO-220FP Transfer characteristics AM03912v1 9 V (V) GS ...

Page 7

... STF10N62K3, STI10N62K3, STP10N62K3 Figure 8. Normalized BV DSS BV DSS (norm) 1.10 1.05 1.00 0.95 0.90 -50 - Figure 10. Output capacitance stored energy E coss (µ 200 300 0 100 Figure 12. Gate charge vs gate-source voltage Figure 13. Normalized on resistance (V) V =496V = temperature Figure 9. AM03913v1 R DS(on) 0.078 0.076 0.074 0.072 ...

Page 8

... T =150°C 0.5 J 0.4 0 8/15 Figure 15. Maximum avalanche energy vs AM03918v1 75 T (°C) 100 125 150 J AM03920v1 T =25° (A) SD Doc ID 15640 Rev 2 STF10N62K3, STI10N62K3, STP10N62K3 temperature E AS (mJ 220 200 180 160 140 120 100 100 40 80 AM03921v1 120 140 T (°C) ...

Page 9

... STF10N62K3, STI10N62K3, STP10N62K3 3 Test circuits Figure 17. Switching times test circuit for resistive load D.U. Figure 19. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 21. Unclamped inductive waveform Figure 18. Gate charge test circuit 3.3 2200 µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/15 STF10N62K3, STI10N62K3, STP10N62K3 Doc ID 15640 Rev 2 ® ...

Page 11

... STF10N62K3, STI10N62K3, STP10N62K3 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2 ...

Page 12

... Package mechanical data Dim 12/15 STF10N62K3, STI10N62K3, STP10N62K3 TO-220FP mechanical data Dia Doc ID 15640 Rev 7012510_Rev_J G ...

Page 13

... STF10N62K3, STI10N62K3, STP10N62K3 Dim I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 2.70 4.95 5.15 10 10. 3.50 3.93 1.27 1.40 Doc ID 15640 Rev 2 Package mechanical data inch ...

Page 14

... Revision history 5 Revision history Table 9. Document revision history Date 08-Jun-2009 22-Jun-2009 14/15 Revision 1 First release. 2 Added new package, mechanical data: I²PAK Doc ID 15640 Rev 2 STF10N62K3, STI10N62K3, STP10N62K3 Changes ...

Page 15

... STF10N62K3, STI10N62K3, STP10N62K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords