STF10N62K3 STMicroelectronics, STF10N62K3 Datasheet - Page 8

• Manufacturer Part Number: STF10N62K3
• Description: MOSFET N-CH 620V 8.4A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STF10N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 50V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
8/15
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
0.7
0.6
0.5
0.3
0.8
0.4
0.9
SD
0
vs temperature
-50
characteristics
10
-25
20
0
T
30 40
J
=150°C
25 50
T
J
=-50°C
50
75
60 70 80
100 125 150
T
J
=25°C
Doc ID 15640 Rev 2
AM03920v1
T
AM03918v1
I
SD
J
(°C)
(A)
Figure 15. Maximum avalanche energy vs
(mJ)
E
160
140
120
STF10N62K3, STI10N62K3, STP10N62K3
220
200
180
100
AS
60
40
20
80
0
0
temperature
20
40
60
80
I
D
=8 A
100
120 140
AM03921v1
T
J
(°C)