STSJ100NHS3LL STMicroelectronics, STSJ100NHS3LL Datasheet

MOSFET N-CH 30V 20A PWRSOIC-8

STSJ100NHS3LL

Manufacturer Part Number
STSJ100NHS3LL
Description
MOSFET N-CH 30V 20A PWRSOIC-8
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STSJ100NHS3LL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
20 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STSJ100NHS3LL
Manufacturer:
ST
0
General features
1. This value is rated accordingly to Rthj-pcb
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology
and a propriertary process for integrating a
monolithic scottky diode. The new Power
MOSFET is optimized for the most demanding
synchronous switch function in DC-DC converter
for Computer and Telecom.
Applications
July 2006
Order codes
STSJ100NHS3LL
Optimal R
Reduced switching losses
Reduced conduction losses
Improved junction-case thermal resistance
Switching application
STSJ100NHS3LL
Type
Part number
DS(on)
STripFET™III Power MOSFET plus monolithic schottky
x Qg trade-off @ 4.5V
V
30V
DSS
0.0042Ω
N-channel 30V - 0.0032Ω - 20A - PowerSO-8™
R
DS(on)
100HS3L-
Marking
20A
I
D
(1)
Rev 3
Internal schematic diagram
PowerSO-8
Package
STSJ100NHS3LL
PowerSO-8
Packaging
Tape & reel
www.st.com
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STSJ100NHS3LL Summary of contents

Page 1

... Computer and Telecom. Applications ■ Switching application Order codes Part number STSJ100NHS3LL July 2006 N-channel 30V - 0.0032Ω - 20A - PowerSO-8™ DS(on) D (1) 0.0042Ω 20A Internal schematic diagram Marking 100HS3L- Rev 3 STSJ100NHS3LL PowerSO-8 Package Packaging PowerSO-8 Tape & reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/12 STSJ100NHS3LL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ...

Page 3

... STSJ100NHS3LL 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (2) I Drain current (continuous Drain current (continuous (3) I Drain current (pulsed) DM Total dissipation TOT Total dissipation Operating junction temperature J Storage temperature T stg 1. This value is rated accordingly to Rthj-pcb 2 ...

Page 4

... V = 4.5V 10V 4.5V Parameter Test conditions V =10V =25V, f=1MHz 15V 4.5V, GS (see Figure 13) STSJ100NHS3LL Min. Typ. Max ± = 1mA 1 = 10A 0.0032 0.0042 = 10A 0.004 0.0057 = 10A @125°C 0.005 = 10A @125°C 0.006 Min. Typ. Max. = 15A 44 4200 =0 700 GS 46.2 = 20A 27 8 ...

Page 5

... STSJ100NHS3LL Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Normalized B VDSS 6/12 Figure 2. Figure 4. vs temperature Figure 6. STSJ100NHS3LL Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STSJ100NHS3LL Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped inductive load test circuit Figure 17. Switching time waveform STSJ100NHS3LL ...

Page 9

... STSJ100NHS3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STSJ100NHS3LL inch MIN. TYP. MAX. 0.068 0.003 0.009 0.064 0.025 0.033 0.013 0.018 0.007 0.010 0.010 0.019 0.188 0.196 0.228 ...

Page 11

... STSJ100NHS3LL 5 Revision history Table 8. Revision history Date 13-Jan-2006 24-Jan-2006 18-Jul-2006 Revision 1 Initial release. 2 Changed unit on Table 7: Source drain diode 3 Complete version Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STSJ100NHS3LL ...

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