STSJ100NHS3LL STMicroelectronics, STSJ100NHS3LL Datasheet - Page 5

• Manufacturer Part Number: STSJ100NHS3LL
• Description: MOSFET N-CH 30V 20A PWRSOIC-8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STSJ100NHS3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STSJ100NHS3LL
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
V
(see Figure 17)
V
R
(see Figure 12)
V
R
(see Figure 12)
SD
SD
DD
DD
DD
G
G
=5A, V
=20A, di/dt = 100A/µs,
=4.7Ω, V
=4.7Ω, V
=25V, Tj=150°C
=15V, I
=15V, I
Test conditions
Test conditions
GS
D
D
=0
=10A,
GS
=10A,
GS
=4.5V
=4.5V
Electrical characteristics
Min.
Min.
Typ.
Typ.
16
45
68
30
30
8
2
Max.
Max.
0.75
20
80
Unit
Unit
ns
ns
ns
ns
nC
ns
A
A
V
A
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