STF11NM60ND STMicroelectronics, STF11NM60ND Datasheet - Page 7

• Manufacturer Part Number: STF11NM60ND
• Description: MOSFET N-CH 600V 10A TO-220FP
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STF11NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD/F/I/P/U11NM60ND
2.1
Figure 2.
Figure 4.
Figure 6.
0.01
0.1
0.1
(A)
(A)
10
10
I
I
D
D
1
1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
I²PAK
Safe operating area for TO-220FP
Safe operating area for DPAK, IPAK Figure 7.
1
1
10
10
Tj=150°C
Tc=25°C
Single
pulse
Tc=25°C
Tj=150°C
Single
pulse
100
100
V
V
DS
DS
(V)
(V)
Doc ID 14625 Rev 2
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
AM08612v1
AM08613v1
Figure 3.
Figure 5.
Thermal impedance for TO-220,
I²PAK
Thermal impedance for TO-220FP
Thermal impedance for DPAK, IPAK
Electrical characteristics
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