IRF6718L2TR1PBF International Rectifier, IRF6718L2TR1PBF Datasheet - Page 3

MOSFET N-CH 25V 61A DIRECTFET L6

IRF6718L2TR1PBF

Manufacturer Part Number
IRF6718L2TR1PBF
Description
MOSFET N-CH 25V 61A DIRECTFET L6
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6718L2TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
0.7 mOhm @ 61A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
2.35V @ 150µA
Gate Charge (qg) @ Vgs
96nC @ 4.5V
Input Capacitance (ciss) @ Vds
6500pF @ 13V
Power - Max
4.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L6
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
270 A
Power Dissipation
83 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6718L2TR1PBFTR
ƒ
ˆ
P
P
P
T
T
T
R
R
R
R
R
ƒ Surface mounted on 1 in. square Cu
board (still air).
Absolute Maximum Ratings
Thermal Resistance
Notes:
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJC
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
A
A
C
= 25°C
= 70°C
= 25°C
0.0001
0.001
0.01
100
0.1
10
1E-006
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
(At lower pulse widths Zth
0.0001
fl
f
j
k
Parameter
Parameter
Ã
0.001
t 1 , Rectangular Pulse Duration (sec)
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
τ
J
0.01
JA
τ
J
τ
1
Ci= τi/Ri
τ
& Zth
Š
1
Ci= τi/Ri
back and with small clip heatsink.
Mounted on minimum footprint full size board with metalized
R
θ
R
JC
is measured at
1
R
1
are combined)
0.1
τ
2
τ
R
2
2
R
2
R
τ
3
3
R
τ
3
3
1
J
Typ.
12.5
–––
–––
1.0
20
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
4
τ
4
R
4
4
-55 to + 175
τ
A
τ
A
Max.
0.029
10
270
4.3
3.0
Ri (°C/W)
83
12.2942
14.4246
2.07265
6.20859

Max.
–––
–––
–––
1.8
35
100
18.10679
2.626824
0.007811
0.239314
τi (sec)
1000
Units
Units
°C/W
W/°C
°C
W
3

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