IRF6718L2TR1PBF International Rectifier, IRF6718L2TR1PBF Datasheet - Page 7

• Manufacturer Part Number: IRF6718L2TR1PBF
• Description: MOSFET N-CH 25V 61A DIRECTFET L6
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6718L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.7 mOhm @ 61A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 96nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 13V
• Power - Max: 4.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L6
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 83 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6718L2TR1PBFTR

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Fig 19a. Unclamped Inductive Test Circuit
R G
20V
Fig 20a. Switching Time Test Circuit
Fig 18a. Gate Charge Test Circuit
V DS
t p
20K
1K
≤ 0.1 %
≤ 1
I AS
D.U.T
0.01 Ω
L
S
DUT
15V
L
DRIVER
+
- V DD
+
-
VCC
A
90%
V
10%
V
GS
I
AS
DS
Id
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Vgs
Fig 18b. Gate Charge Waveform
t
d(off)
t
Qgodr
f
t p
Qgd
t
d(on)
V
(BR)DSS
Qgs2
t
r
Vgs(th)
Vds
Qgs1
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