IRF6718L2TR1PBF International Rectifier, IRF6718L2TR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6718L2TR1PBF
• Description: MOSFET N-CH 25V 61A DIRECTFET L6
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6718L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.7 mOhm @ 61A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 96nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 13V
• Power - Max: 4.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L6
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 83 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6718L2TR1PBFTR

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

8
‚
+
-
D.U.T
™
ƒ
+
-
•
•
•
•
SD
Fig 19.
•
•
•
-
G
„
D
D
D
+
HEXFET
G
+
-
®
Re-Applied
Voltage
Power MOSFETs
S
S
Reverse
Recovery
Current
S
S
D = DRAIN
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
G = GATE
S = SOURCE
P.W.
SD
DS
Waveform
S
S
Waveform
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
Diode Recovery
Current
dv/dt
D
D
D
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
www.irf.com