IRF6718L2TR1PBF International Rectifier, IRF6718L2TR1PBF Datasheet - Page 4

• Manufacturer Part Number: IRF6718L2TR1PBF
• Description: MOSFET N-CH 25V 61A DIRECTFET L6
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6718L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.7 mOhm @ 61A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 96nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 13V
• Power - Max: 4.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L6
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 83 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6718L2TR1PBFTR

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
100
100
100
0.1
0.1
10
10
Fig 6. Typical Transfer Characteristics
1
1
0.1
Fig 4. Typical Output Characteristics
1
1
V DS = 15V
≤60µs PULSE WIDTH
C oss
2.5V
C rss
C iss
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
1
f = 1 MHZ
10
10
≤ 60µs PULSE WIDTH
Tj = 25°C
3
T J = 175°C
T J = 25°C
T J = -40°C
TOP
BOTTOM
100
4
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
100
5
Fig 7. Normalized On-Resistance vs. Temperature
1000
0.90
0.80
0.70
0.60
0.50
100
2.0
1.5
1.0
0.5
10
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance vs.
I D = 61A
Top
Bottom
Drain Current and Gate Voltage
2.5V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vgs = 6.0V
Vgs = 18V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
Vgs = 14V
Vgs = 16V
50
1
I D , Drain Current (A)
V GS = 10V
V GS = 4.5V
≤ 60µs PULSE WIDTH
Tj = 175°C
100
10
TOP
BOTTOM
100
150
T J = 25°C
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VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
200