IRF6718L2TR1PBF International Rectifier, IRF6718L2TR1PBF Datasheet - Page 9

• Manufacturer Part Number: IRF6718L2TR1PBF
• Description: MOSFET N-CH 25V 61A DIRECTFET L6
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6718L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.7 mOhm @ 61A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 96nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 13V
• Power - Max: 4.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L6
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 83 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6718L2TR1PBFTR

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DirectFET™ Part Marking
www.irf.com
™
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
GATE MARKING
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.18
1.34
9.05
6.85
5.90
0.55
0.58
0.98
0.73
0.38
2.52
0.616
0.020
0.09
MIN
METRIC
DIMENSIONS
9.15
7.10
0.65
0.62
1.22
1.02
0.77
0.42
1.47
0.676
0.080
0.18
6.00
2.69
MAX
0.356
0.270
0.232
0.022
0.023
0.046
0.015
0.029
0.015
0.053
0.099
0.0235
0.0008
0.003
MIN
IMPERIAL
0.360
0.280
0.236
0.026
0.024
0.048
0.017
0.030
0.017
0.058
0.106
0.0274
0.0031
0.007
MAX
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