STP9NK90Z STMicroelectronics, STP9NK90Z Datasheet - Page 4

• Manufacturer Part Number: STP9NK90Z
• Description: MOSFET N-CH 900V 8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r
• Type: Power MOSFETr

Specifications of STP9NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2115pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.3Ohm
• Drain-source On-volt: 900V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2785-5

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
CASE
V
(BR)DSS
oss eq
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
= 25 °C unless otherwise specified)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 9479 Rev 7
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
V
V
V
V
V
Figure 20
I
V
V
V
V
V
D
GS
GS
GS
DS
DD
DS
DS
GS
DS
GS
= 1 mA, V
= 25 V, f = 1 MHz,
= 0
= 0, V
= 720 V, I
=10 V
= max rating,
= max rating @125 °C
= ± 20 V, V
= V
= 10 V, I
Test conditions
Test conditions
GS
DS
, I
D
GS
D
= 0 to 720 V
D
= 100 µA
= 3.6 A
= 0
DS
= 8 A
= 0
Min.
Min.
900
-
-
-
3
2115
Typ.
Typ.
3.75
190
115
1.1
40
72
14
38
oss
Max.
Max.
±
4.5
1.3
when V
50
10
1
-
-
-
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
Ω
V
V