STP80NF12 STMicroelectronics, STP80NF12 Datasheet

MOSFET N-CH 120V 80A TO-220

STP80NF12

Manufacturer Part Number
STP80NF12
Description
MOSFET N-CH 120V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP80NF12

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
120V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
189nC @ 10V
Input Capacitance (ciss) @ Vds
4300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Forward Transconductance Gfs (max / Min)
80 S
Drain-source Breakdown Voltage
120 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
40A
Drain Source Voltage Vds
120V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6743-5
STP80NF12

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Features
Application
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1.
November 2008
STP80NF12
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching applications
Type
STP80NF12
Order code
Device summary
120 V
V
DSS
< 0.018 Ω
R
max
DS(on)
P80NF12
Marking
N-channel 120 V, 0.013 Ω, 80 A, TO-220
80 A
I
D
Rev 7
Figure 1.
STripFET™ II Power MOSFET
Package
TO-220
Internal schematic diagram
TO-220
STP80NF12
1
2
Packaging
3
Tube
www.st.com
1/12
12

Related parts for STP80NF12

STP80NF12 Summary of contents

Page 1

... It is also intended for any applications with low gate drive requirements. Table 1. Device summary Order code STP80NF12 November 2008 N-channel 120 V, 0.013 Ω TO-220 STripFET™ II Power MOSFET R DS(on max < 0.018 Ω Figure 1. Marking P80NF12 Rev 7 STP80NF12 TO-220 Internal schematic diagram Package Packaging TO-220 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP80NF12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STP80NF12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope (4) E Single pulse avalanche energy AS T Operating junction temperature ...

Page 4

... Parameter Test conditions =4.7 Ω Figure 13 on page 8 Min. Typ. Max 120 GS ±100 = 250 µ 0.013 0.018 D Min. Typ. Max 4300 600 230 140 = Min. Typ. Max 145 = 134 115 STP80NF12 Unit V 1 µA 10 µ Ω Unit 189 nC nC Unit ...

Page 5

... STP80NF12 Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Parameter ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS 6/12 Figure 3. Figure 5. vs. temperature Figure 7. STP80NF12 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STP80NF12 Figure 8. Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs. temperature 7/12 ...

Page 8

... Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit STP80NF12 ...

Page 9

... STP80NF12 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STP80NF12 inch Min Typ Max 0.173 0.181 0.024 0.034 0.044 0.066 0.019 0.027 0.6 0.62 0.050 0.393 0.409 0.094 0.106 0.194 0.202 0.048 ...

Page 11

... STP80NF12 5 Revision history Table 8. Revision history Date 21-Jun-2004 24-Jul-2006 31-Jan-2007 10-Apr-2007 19-Apr-2007 17-Nov-2008 Revision 2 Preliminary version 3 The document has been reformatted, SOA updated Table 4 Typo mistake on Table 2 5 Typo mistake on 6 Corrected value on 7 Inserted E value on AS Revision history Changes 2. Table 3 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP80NF12 ...

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