STP80NF12 STMicroelectronics, STP80NF12 Datasheet - Page 5

• Manufacturer Part Number: STP80NF12
• Description: MOSFET N-CH 120V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF12

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 189nC @ 10V
• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Forward Transconductance Gfs (max / Min): 80 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 120V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6743-5; STP80NF12

STP80NF12
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100 A/µs,
V
SD
SD
DD
=80 A, V
=80 A,
Test conditions
=35 V, T
GS
J
= 150 °C
=0
Electrical characteristics
Min.
Typ.
0.85
155
11
Max
320
1.3
80
Unit
µC
ns
A
A
V
A
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