IRFB4332PBF International Rectifier, IRFB4332PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4332PBF
• Description: MOSFET N-CH 250V 60A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4332PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5860pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 390 W
• Mounting Style: Through Hole
• Gate Charge Qg: 99 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
ΔΒV
R
V
ΔV
I
I
g
Q
Q
t
E
C
C
C
C
L
L
E
E
V
I
I
I
V
t
Q
IRFB4332PbF
Electrical Characteristics @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
st
AS
S
SM
rr
fs
D
S
DS(on)
GS(th)
PULSE
iss
oss
rss
oss
AS
AR
DS(Avalanche)
SD
g
gd
rr
@ T
2
GS(th)
DSS
DSS
eff.
C
/ΔT
/ΔT
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
(Body Diode)
Pulsed Source Current
(Body Diode) c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
250
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
5860
–––
170
–––
–––
–––
–––
–––
–––
–––
520
920
530
130
360
–––
–––
–––
190
820
-14
4.5
7.5
29
99
35
1230
-100
Typ.
–––
–––
–––
–––
–––
100
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
300
–––
230
290
5.0
1.0
1.3
33
20
60
mV/°C
mV/°C
mΩ
mA
μA
nA
nC
nH
nC
pF
ns
μJ
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
L = 220nH, C= 0.3μF, V
V
L = 220nH, C= 0.3μF, V
V
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs e
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DD
DD
DS
DS
GS
DS
GS
= 25°C, I
= 25°C, I
= V
= 250V, V
= 250V, V
= 25V, I
= 200V, R
= 200V, R
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 125V, I
= 200V, V
= 0V
= 0V, V
GS
Max.
230
–––
39
35
, I
D
S
F
D
DS
Conditions
D
Conditions
D
= 250μA
= 35A, V
= 35A, V
= 250μA
D
= 35A e
= 35A
GS
GS
GS
G
G
= 0V to 200V
= 35A, V
= 5.1Ω, T
= 5.1Ω, T
= 0V
= 0V, T
= 15V, R
D
GS
DD
= 1mA
www.irf.com
GS
J
GS
GS
= 0V e
= 50V
J
J
= 125°C
G
= 10Ve
Units
= 25°C
= 100°C
= 4.7Ω
= 15V
= 15V
mJ
mJ
V
A
G
S
D