IRFB4332PBF International Rectifier, IRFB4332PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB4332PBF
• Description: MOSFET N-CH 250V 60A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4332PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5860pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 390 W
• Mounting Style: Through Hole
• Gate Charge Qg: 99 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical E
1000
1000
1000
800
600
400
200
0.01
100
100
Fig 3. Typical Transfer Characteristics
0.1
10
10
0
1
1
150
Fig 1. Typical Output Characteristics
0.1
4.0
L = 220nH
C = 0.3μF
TOP
BOTTOM
T J = 175°C
100°C
25°C
V DS, Drain-to -Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
160
5.0
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
PULSE
T J = 25°C
1
170
V DS = 25V
≤ 60μs PULSE WIDTH
vs. Drain-to-Source Voltage
≤ 60μs PULSE WIDTH
Tj = 25°C
6.0
5.5V
180
10
7.0
190
100
8.0
200
Fig 4. Normalized On-Resistance vs. Temperature
1000
Fig 6. Typical E
800
600
400
200
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
0
Fig 2. Typical Output Characteristics
100
10
100
-60 -40 -20 0
1
0.1
L = 220nH
C = Variable
I D = 35A
V GS = 10V
TOP
BOTTOM
110
100°C
25°C
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
I D, Peak Drain Current (A)
120
IRFB4332PbF
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
PULSE
20 40 60 80 100 120 140 160 180
1
130
vs. Drain Current
≤ 60μs PULSE WIDTH
Tj = 175°C
140
10
150
5.5V
160
3
170
100