IRFB4332PBF International Rectifier, IRFB4332PBF Datasheet - Page 7

• Manufacturer Part Number: IRFB4332PBF
• Description: MOSFET N-CH 250V 60A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4332PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5860pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 390 W
• Mounting Style: Through Hole
• Gate Charge Qg: 99 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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A
B
Fig 21a. t
RG
RG
st
and E
DRIVER
DUT
Ipulse
PULSE
Fig 21c. E
Test Circuit
L
C
VCC
PULSE
Test Waveforms
PULSE A
PULSE B
Fig 21b. t
st
Test Waveforms
IRFB4332PbF
t
ST
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