IRFB4332PBF International Rectifier, IRFB4332PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB4332PBF
• Description: MOSFET N-CH 250V 60A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4332PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5860pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 390 W
• Mounting Style: Through Hole
• Gate Charge Qg: 99 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFB4332PbF
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 11. Maximum Drain Current vs. Case Temperature
1400
1200
1000
4
10000
800
600
400
200
8000
6000
4000
2000
60
50
40
30
20
10
0
0
0
Fig 7. Typical E
25
25
1
L = 220nH
C= 0.3μF
C= 0.2μF
C= 0.1μF
Crss
Coss
Ciss
50
50
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Temperature (°C)
75
10
75
PULSE
100
f = 1 MHZ
vs.Temperature
100
125
100
125
150
150
175
1000
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
1000
1000
100
100
0.1
0.1
20
16
12
10
10
8
4
0
1
1
0.2
0
1
I D = 35A
Tc = 25°C
Tj = 175°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T J = 175°C
0.4
Q G Total Gate Charge (nC)
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 200V
V DS = 125V
V DS = 50V
10
100μsec
0.6
80
T J = 25°C
0.8
100
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120
V GS = 0V
1.0
10μsec
1μsec
1000
160
1.2